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| APM9932/C Dual Enhancement Mode MOSFET (N-and P-Channel) Features * N-Channel 20V/15A, RDS(ON)=12m(typ.) @ VGS=10V RDS(ON)=17m(typ.) @ VGS=4.5V Pin Description APM9932 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 G1 S2 G2 APM9932C 1 2 3 4 8 7 6 5 D D D D * P-Channel -20V/-6A, RDS(ON)=30m(typ.) @ VGS=-4.5V RDS(ON)=45m(typ.) @ VGS=-2.5V SO-8 D1 D1 SO-8 D * * * Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package G1 G1 G2 Applications * Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G2 S1 S1 S2 N-Channel MOSFET S2 N- and P-Channel MOSFET D2 D2 P-Channel MOSFET Ordering and Marking Information APM9932/C Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150C Handling Code TR : Tape & Reel APM9932/C K : APM9932/C XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 1 www.anpec.com.tw APM9932/C Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM PD TJ TSTG RjA Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous Maximum Drain Current - Pulsed TA=25C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient TA=100C (TA = 25C unless otherwise noted) N-Channel 20 16 15 30 2.5 1.0 150 -55 to 150 50 P-Channel -20 12 -6 -10 2.5 W 1.0 C C C/W A V Unit * Surface Mounted on FR4 Board, t 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Parameter (TA = 25C unless otherwise noted) APM9932/C Min. N-Ch 20 -20 1 -1 0.6 -0.6 1.3 -1.3 100 100 12 17 P-Ch N-Ch P-Ch 0.6 -0.6 30 45 18 27 42 60 1.3 -1.3 V m nA Typ. Max. Test Condition Unit VGS=0V , IDS=250A VDS=18V , VGS=0V VDS=-18V , VGS=0V VDS=VGS , IDS=250A VDS=VGS , IDS=-250A VGS=16V , VDS=0V VGS=12V , VDS=0V VGS=10V , IDS=9A VGS=4.5V , IDS=7A VGS=-4.5V , IDS=-6A VGS=-2.5V , IDS=-5A ISD=5A , VGS=0V ISD=-2A , VGS=0V P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch V A V Gate Leakage Current RDS(ON)a Drain-Source On-state Resistance VSDa Diode Forward Voltage Notes a : Pulse test ; pulse width 300s, duty cycle 2% Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 2 www.anpec.com.tw APM9932/C Electrical Characteristics (Cont.) Symbol Dynamica Qg Qgs Qgd td(ON) Total Gate Charge N-Channel VDS=10V , IDS= 6A Gate-Source Charge VGS=4.5V P-Channel VDS=-4V , IDS=-1A VGS=-4.5V N-Channel VDD=10V , IDS=1A , Tr Turn-on Rise Time VGEN=4.5V , RG=10 P-Channel td(OFF) Tf Ciss Coss Crss Turn-off Delay Time VDD=-4V , IDS=-1A , VGEN=-4.5V , RG=10 Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel VGS=0V , VDS=15V Frequency=1.0MHz P-Channel VGS=0V , VDS=-4V Frequency=1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 14 19 5 4.1 2.8 1.6 6 23 5 45 16 45 5 32 1225 1400 330 520 220 320 pF 12 45 10 80 40 90 20 55 ns 22 25 nC Parameter (TA = 25C unless otherwise noted) APM9932/C Min. Typ. Max. Test Condition Unit Gate-Drain Charge Turn-on Delay Time Notes a : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 3 www.anpec.com.tw APM9932/C Typical Characteristics N-Channel Output Characteristics 20 VGS=3,4,5,6,7,8,9,10V Transfer Characteristics 20 ID-Drain Current (A) ID-Drain Current (A) 16 VGS=2.5V 15 12 10 8 VGS=2V TJ=125C 5 TJ=25C TJ=-55C 4 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 IDS=250uA On-Resistance vs. Drain Current 0.030 VGS(th)-Threshold Voltage (V) (Normalized) 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance () 1.25 0.025 0.020 0.015 0.010 0.005 0.000 VGS=4.5V VGS=10V -25 0 25 50 75 100 125 150 0 4 8 12 16 20 Tj - Junction Temperature (C) ID - Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 4 www.anpec.com.tw APM9932/C Typical Characteristics (Cont.) N-Channel On-Resistance vs. Gate-to-Source Voltage 0.16 ID=15A On-Resistance vs. Junction Temperature 2.0 VGS=10V ID=15A RDS(ON)-On-Resistance () 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance () (Normalized) 0.14 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (C) Gate Charge 10 VDS=10V ID=6A Capacitance 1800 Frequency=1MHz VGS-Gate-Source Voltage (V) 8 1500 Capacitance (pF) Ciss 6 1200 900 600 Coss 4 2 300 Crss 0 0 5 10 15 20 25 30 0 0 5 10 15 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 5 www.anpec.com.tw APM9932/C Typical Characteristics (Cont.) N-Channel Source-Drain Diode Forward Voltage 20 10 80 70 60 Single Pulse Power IS-Source Current (A) Power (W) 50 40 30 20 10 TJ=150C TJ=25C 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 0.1 1 10 30 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA SINGLE PULSE D=0.02 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 6 www.anpec.com.tw APM9932/C Typical Characteristics P-Channel Output Characteristics 10 -VGS=2,3,4,5,6,7,8,9,10V Transfer Characteristics 10 -ID-Drain Current (A) 6 -VGS=2V -ID-Drain Current (A) 8 8 6 4 4 TJ=125C 2 2 TJ=25C TJ=-55C 0 0 1 2 3 4 5 6 7 8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 -IDS=250uA On-Resistance vs. Drain Current 0.08 -VGS(th)-Threshold Voltage (V) (Normalized) 1.25 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance () 0.07 0.06 -VGS=2.5V 0.05 0.04 -VGS=4.5V 0.03 0.02 0.01 -25 0 25 50 75 100 125 150 0.00 0 1 2 3 4 5 6 7 8 9 10 Tj - Junction Temperature (C) -ID - Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 7 www.anpec.com.tw APM9932/C Typical Characteristics (Cont.) P-Channel On-Resistance vs. Gate-to-Source Voltage 0.12 -ID=6A On-Resistance vs. Junction Temperature 1.8 -VGS=4.5V -ID=6A RDS(ON)-On-Resistance () 0.10 0.08 0.06 0.04 0.02 0.00 RDS(ON)-On-Resistance () (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 1 2 3 4 5 6 7 8 9 10 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (C) Gate Charge 5 -VDS=4V -ID=1A Capacitance 2000 Frequency=1MHz -VGS-Gate-Source Voltage (V) 4 1600 3 Capacitance (pF) Ciss 1200 2 800 Coss 1 400 Crss 0 0 4 8 12 16 20 0 0 2 4 6 8 10 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 8 www.anpec.com.tw APM9932/C Typical Characteristics (Cont.) P-Channel Source-Drain Diode Forward Voltage 10 80 Single Pulse Power -IS-Source Current (A) 60 1 TJ=150C TJ=25C Power (W) 1.2 1.4 40 0.1 20 0.0 0.2 0.4 0.6 0.8 1.0 0 0.01 0.1 1 10 30 -VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA SINGLE PULSE D=0.02 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 9 www.anpec.com.tw APM9932/C Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 10 www.anpec.com.tw APM9932/C Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max. 60 seconds 215-219C or 235 +5/-0C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C www.anpec.com.tw Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 11 APM9932/C Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 0.5 Po T1 12.4 0.2 P1 2.0 0.1 T2 2 0.2 Ao 6.4 0.1 W 12 0. 3 Bo 5.2 0. 1 P 8 0.1 Ko E 1.750.1 t SOP- 8 F 5.5 1 1.55 +0.1 1.55+ 0.25 4.0 0.1 2.1 0.1 0.30.013 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 12 www.anpec.com.tw APM9932/C Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 13 www.anpec.com.tw |
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